portfolioProject Publications

The Project has had 137 Dissemination Activities and 37 peered-reviewed Publications.

imgProject Details

  • Project Number: 318388
  • Project start date: 01/11/2012
  • Project end date: 31/10/2016

imgFunded by:

  • European Union
  • Seventh Framework Programme

Scientific papers

Publications (in peer reviewed journas and scientific magazines)

Formation of Three-Dimensional Islands in Subcritical layer deposition in stranski-krastanow growth.V. Shchukin, N. Ledentsov, S. Rouvimov. Phys. Rev. Lett.,Vol.110, Iss.17, 176101.
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Morphology evolution in strain-compensated multiple quantum well structures. N. N. Ledentsov, V. A. Shchukin, S. Rouvimov. Appl. Phys. Lett. 104, 033106.
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Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu.Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, A. Hoffmann. Appl. Phys. Lett. 105, 181902.
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Atomistic simulations of InGaN/GaN random alloy quantum well LEDs. M.Lopez, M.Auf der Maur, A.Di Carlo, A.Pecchia, F.Sacconi, G.Penazzi. physica status solidi. Volume 11, Issue 3-4, pages 632–634, April 2014.
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Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes.I.Titkov, S.Karpov, A.Yadav, V.Zerova, M.Zulonas, B.Galler, M.Strassburg, I.Pietzonka, H.Juergen Lugauer, E.Rafailov Optical and Quantum Electronics' June 2015, Volume 47, Issue 6, pp 1293-1303.
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Infuence of hydrogen on indium incorporation in MOVPE growth of InGaN layers.Robert Czernecki, Slawomir Kret, Pawel Kempisty, Ewa Grzanka, Jerzy Plesiewicz, Greg Targowski, Szymon Grzanka, Marta Bilska, Julita Smalc-Koziorowska, Stanislaw Krukowski, Tadek Suski, Piotr Perlin, Mike Leszczynski. Journal of Crystal Growth. Volume 402, 15 September 2014, Pages 330–336.
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InGaN: Direct Correlation of Nanoscopic Morphology Features with Optical and Structural Properties.H.Koch, F.Bertram, I.Pietzonka, J.Philipp Ahl, M.Strassburg, O.August, J.Christian, H.Kalisch, A.Vescan, H.Jürgen Lugauer. Appl. Phys. Lett. 105, 072108 (2014).
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ABC-Model for interpretation of internal quantum efficiency and its droop in III-Nitride LEDs: A review.S.Karpov. IEEE Journal of Selected Topics in Quantum Electronics. Volume:50 , Issue: 11, 911 - 920.
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Optimal ways of colour mixing for high-quality white-light LED sources.K.Bulashevich, A.Kulik, S.Karpov. Physica Status Solidi (A) Applications and Materials 212(5):914-919 · October 2015.
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Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes.Shafat Jahangir, Ines Pietzonka, Martin Strassburg, Pallab Bhattacharya. Applied Physics Letters 105, 111117,(2014).
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Multiscale approaches for the simulation of GaN based LEDs.Matthias Auf der Maur. Journal of Computational Electronics. June 2015, Volume 14, Issue 2, pp 398-408
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Effect of antimony on growth mode and propertie sof thick InGaN layers.Holger Koch, Ines Pietzonka, Bastian Galler, Martin Strassburg, HolgerKalisch, Andrei Vescan, Hans-Juergen Lugauer. Journal of Crystal Growth. Volume 414, 15 March 2015, Pages 42–48.
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Spectral dependence of light extraction efficiency of high-power IIInitride light-emitting diodes.Sergey Yu. Karpov, Michael Binder, Bastian Galler, and Dario Schiavon. Physica Status Solidi RRL. Volume 9, Issue 5, pages 312–316, May 2015.
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Strategies for creating efficient, beautiful whites.Sergey Karpov. Compound Semiconductor Volume 21 Issue 2 March 2015.
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Efficiency drop in green inganInGaN/gan GaN light emitting diodes: The role of random alloy fluctuations. Matthias Auf der Maur, Alessandro Pecchia, Gabriele Penazzi, Walter Rodrigues, and Aldo Di Carlo. Phys. Rev. Lett. 116, 027401 – Published 15 January 2016.
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Impact of surface recombination on efficiency of III-nitride light-emitting diodes.S.Karpov & K. Bulashevich.Phys. Status Solidi RRL, Volume 10: 480–484. June 2016
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Trap-assisted tunneling in InGaN/GaN single-quatum-well light-emitting diodes. M.Auf der Maur, B. Galler, I.Pietzonka, M.Strassburg, H. Lugauer and A. Di Carlo. Applied Physics Letter, Volume 105. Issue 133504 (2014).
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Temperature-dependant recomination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes and the green gap. Felix Nippert, Sergey Yu. Karpov, Gordon Callsen, Bastian Galler, Thomas Kure, Christian Nenstiel, Markus R. Wagner, Martin Straßburg, Hans-Jürgen Lugauer, and Axel Hoffmann. Applied Physics Letter, Volume 109. Issue 1661106 (2016).
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Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes.Shafat Jahangir, Ines Pietzonka, Martin Strassburg, Pallab Bhattacharya. Applied Physics Letter, Volume 105. Issue 111117 (2014).
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Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach. Tsatsulnikov, A. F.; Lundin, W. V.; Sakharov, A. V.; Nikolaev, A. E.; Zavarin, E. E.; Usov, S. O.; Yagovkina, M. A.; Hÿtch, M. J.; Korytov, M.; Cherkashin, N. Science of Advanced Materials, Volume 7, Number 8, August 2015, pp. 1629-1635(7).
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Effects of anitmony on growth mode and properties of thick InGaN layers. Holger Koch, Ines Pietzonka, Bastian Galler, Martin Strassburg, Holger Kalisch, Andrei Vescn, Hans-Juergen Lugaur. Journal of Cyrstal Growth, Volume 414, 15 March 2015. Pages 42-48.
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Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells. Felix Nippert, Anna Nirschl, Tobias Schulz, Gordon Callsen, Ines Pietzonka, Steffen Westerkamp, Thomas Kure, Christian Nenstiel, Martin Strassburg, Martin Albrect and Axel Hoffman. Journal of Applied Physics, 119, 2015707 (2016).
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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique. I. Reklaitis, R. Kudžma. Miasojedova, P. Vitta, A. Žukauskas. Tomašiūnas. Pietzonka, M. Strassburg. Journal of Electronic Materials, July 2016, Volume 45, Issue 7, pp. 3290-3299..
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Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition. A.Kadys, T.Malinauskas, T.Grinys, M.Dmukauskas, J.Mickevičius, J.Aleknavičius, R.Tomašiūnas, A.Selskis, R.Kondrotas, S.Stanionytė, H.Lugauer, M.Strassburg. Journal of Electronic Materials. January 2015, Vol. 44, Issue 1, pp. 188-193.
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Green emission from semipolar InGaN quantum wells grown on low-defect (1222) GaN templates fabricated on patterned r-sapphire.de Mierry, P., Kappei, L., Tendille, F., Vennéguès, P., Leroux, M. and Zuniga-Perez, J. Phys. Status Solidi B, 253: 105–111.
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Effect of the design of the active region of monolithic mulit-color LED heterostructures on their spectra and emission efficiency. A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Sinitsyn, N. A. Cherkashin, S. Y. Karpov. Semiconductors. November 2015, Volume 49, Issue 11, pp 1516–1521.
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Atomistic simulations of InGaN/GaN random alloy quantum well LEDs. López, M., Pecchia, A., Auf der Maur, M., Sacconi, F., Penazzi, G. and Di Carlo, A. (2014),Phys. Status Solidi C, 11: 632–634.
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Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence.Felix Nippert, Sergey Karpov, Ines Pietzonka, Bastian Galler, Alexander Wilm, Thomas Kure, Christian Nenstiel, Gordon Callsen, Martin Straßburg, Hans-Jürgen Lugauer, and Axel Hoffmann. 2016 Jpn. J. Appl. Phys. 55 05FJ01.
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Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. Ledentsov, N. N. and Shchukin, V. A. and Lyytikäinen, J. and Okhotnikov, O. and Shernyakov, Yu. M. and Payusov, A. S. and Gordeev, N. Yu. and Maximov, M. V. and Schlichting, S. and Nippert, F. and Hoffmann, A., Applied Physics Letters, 105, 181902 (2014),
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AlGaInP red-emitting light emitting diode under extremely high pulsed pumping. Amit Yadav, Ilya E. Titkov, Grigorii S. Sokolovskii, Sergey Yu. Karpov, Vladislav V. Dudelev, Ksenya K. Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, Edik U. Rafailov. Light-Emitting Diodes: Materials, Devices and Applications for Solid State Lighting XX, 9761K (8th March 2016).
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Light-emitting diodes for solid-state lighting: searching room for improvements. Sergey Yu. Karpov. Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680C (8 March 2016);
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Recombination dynamics in InxGa1−xN quantum wells—Contribution of excited subband recombination to carrier leakage. Schulz, T. and Nirschl, A. and Drechsel, P. and Nippert, F. and Markurt, T. and Albrecht, M. and Hoffmann, A., Applied Physics Letters, 105, 181109 (2014), .
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Realistic model of LED structure with InGaN quantum-dots active region. Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F. Tsatsulnikov, Alexei V. Sakharov, Wsevolod V. Lundin, A. E. Nikolaev, Nikolay Cherkashin, Martin J. Hÿtch, Sergey Yu. Karpov, and Aldo di Carlo.2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, 2015, pp. 1543-1546
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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells.M.Dmukauskas, A.Kadys, T.Malinauskas, T.Grinys, I.Reklaitis, K.Badokas; M.Skapas, R.Tomasiunas, D.Dobrovolskas, S.Stanionytė, I.Pietzonka, M.Strassburg, H.Lugauer.Accepted by J. Appl. Phys. D: Appl. Phys. 2016.
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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency. Karpov, S. Yu., Cherkashin, N. A., Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Sinitsin, M. A., Usov, S. O., Zavarin, E. E. and Tsatsulnikov, A. F. (2016), Phys. Status Solidi A, 213: 19–29.
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Differential Carrier Lifetime in InGaN-Based Light-Emitting Diodes Obtained by Small-Signal Frequency-Domain Measurements. I. Reklaitis, R. Kudžma. Miasojedova, P. Vitta, A. Žukauskas. Tomašiūnas. Pietzonka, M. Strassburg. Journal of Electronic Materials, July 2016, Volume 45, Issue 7, pp. 3290-3299..
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Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells.Robert Czernecki, Ewa Grzanka, Julita Smalc-Koziorowska, Szymon Grzanka, Dario Schiavon, Grzegorz Targowski, Jerzy Plesiewicz, Pawel Prystawko, Tadeusz Suski, Piotr Perlin, Mike Leszczynski. Journal of Crystal Growth, Volume 414, 15 March 2015, Pages 38-41
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Confererence Abstracts

Simulation of random alloy effects in InGaN/GaN LEDs.M.Lopez, M.Auf der Maur, A.Pecchia, F.Sacconi, G.Penazzi & A.Di Carlo. NUSOD 2013: 13th International Conference on Numerical Simulation of Optoelectronic Devices, 19-22 August 2013, Vancouver, Canada.
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Growth of InN and InGaN thin layers on GaN template by pulsed MOCVD.M.Dmukauskas, A.Kadys, T.Malinauskas, T.Grinys, I.Reklaitis, J.Mickervicius, G.Tamulaitis, R.Tomasiunas, H.Lugauer & M.Strassburg. 40th Lithuanian National Conference of Physics. June 10-12, 2013, Vilnius, Lithuania. .
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Radiative and non-radiative decay rates in green-emitting InGaN & GaN quanum well structures.F.Nippert, A.Nirschl, I.Pietzonka, H-J.Lugauer, T.Kure, C.Nenstiel, G.Callsen, M.Bugler , M.Strassburg, & A.Hoffmann. iNOW13: International Nano-Optoelectronics Workshop. 19th — 30th August 2013. Corsica, France.
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Atomic scale investigations of the Indium incorporation in the InGaN/GaN quantum wells by transmission electron microscopy. M.Korytov, N.Cherkashin, J.Bassen, H. J. Lugauer, H.Laux, T.Schulz, T.Remmele, M.Albrecht, and M.Hytch. IWN 2014: International Workshop on Nitride Semiconductors 2014. 24 - 29 August 2014. Wroclaw, Poland.
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Atomic-Scale composition profiles of MOCVD-grown InGaN/GaN quantum wells: modelling and characterization.A.Segal, E.Yakovlev, S.Karpov, M.Korytov, N.Cherkashin, J.Bassen, H.Jürgen Lugauer, H.Laux. IWN 2014: International Workshop on Nitride Semiconductors 2014. 24 - 29 August 2014. Wroclaw, Poland.
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Origin of non-radiative losses in thick InGaN/GaN QWs.F.Nippert, A.Nirschl, I.Pietzonka, H-J.Lugauer, T.Kure, C.Nenstiel, G.Callsen, M.Bugler , M.Strassburg, & A.Hoffmann. Photonics West, 2014. 1 - 6 February 2014. The Moscone Center San Francisco, CA , United States.
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Atomistic simulations of GaN/InGaN/GaN nanocolumn LEDs including random alloy effects .M.Lopez, M.Auf der Maur, A.Di Carlo, A.Pecchia, F.Sacconi, & G.Penazzi. 10th International Conference on Nitride Semiconductors. August 25-30, 2013. Washington, D.C., USA.
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Radiative and non-radiative processes in green InGaN/GaN quantum wells.F.Nippert, A.Nirschl, I.Pietzonka, H-J.Lugauer, T.Kure, C.Nenstiel, G.Callsen, M.Bugler , M.Strassburg, & A.Hoffmann. 10th International Conference on Nitride Semiconductors. August 25-30, 2013. Washington, D.C., USA.
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Internal quantum efficiency of InGaN/GaN LEDs with short period superlattice and two-colour quantum wells.I.Titkov, A.Tsatsulnikov, W.Lundin, A..Sakharov, M.Zulonas, E.Rafailov. Photonics West, 2014. 1 - 6 February 2014. The Moscone Center San Francisco, CA , United States.
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Coupling drift-diffusion/NEGF for the simulation of InGaN/GaN LEDs.M.Auf der Maur, A.Pecchia, & A.Di Carlo. IWCE 2014: International Wireless Communications Expo. March 24th - 28th, 2014. Las Vegas, NV, USA.
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Atomic scale investigations of in incorporation in the InGaN/GaN quantum wells with transmission electron microscopy.M.Korytov, N.Cherkashin, J.Bassen, H.Jürgen Lugauer, H.Laux, T.Schulz, T.Remmele, M.Albrecht. ISGN-5: 5th International Symposium on Growth of III-Nitrides. May 18-22, 2014. Atlanta, Georgia, USA.
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Optimal ways of color mixing for high-quality white-light LED sources.K.Bulashevich, A.Kulik, & S.Karpov. IWN 2014: International Workshop on Nitride Semiconductors 2014. 24 - 29 August 2014. Wroclaw, Poland.
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Novel evaulation procedure of internal and extraction efficiency of high-power blue LEDs.I.Titkov, A.Yadav, V.Zerova, M.Zulonas, E.Rafailov, S.Karpov, M.Strassburg, I.Pietzonka, H.Jürgen Lugauer. 16th International Conference “Laser Optics 2014". June 30 - July 4, 2014. Saint-Petersburg, Russia.
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Colour management of InGaN/GaN based monolithic two-wavelength LEDs.A.Yadav, M.Zulonas, I.E.Titkov, V.L.Zerova, K.A.Fedorova, A.F.Tsatsulnikov, W.V.Lundin, A.V.Sakharov, E.U.Rafailov. SIOE: Semiconductor and Integrated OptoElectronics Conference. March 31st - April 2nd 2015. Cardiff, UK.
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ABC-Model for interpretation of internal quantum efficiency and its droop in III-Nitride LEDs: A review.S.Karpov. NUSOD 2014: 14th International Conference on Numerical Simulation of Optoelectronic Devices. 1-4 September 2014 Palma de Mallorca, Spain.
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Comparison of InGaN quantum wells on polar and (11-22) semipolar substrates of different defect density.L.Kappei, J.Zuniga-Perez, M.Leroux, M.Teisseire, F.Tendille, P.Vennéguès, and P.de Mierry. IWN 2014: International Workshop on Nitride Semiconductors 2014. 24 - 29 August 2014. Wroclaw, Poland.
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Control of properties of InGaN/GaN structures by growth sequence variation.A.Sakharov, D.Davydov, W.Lundin, A.Nikolaev, O.Usov, M.Yagovkina, E.Zavarin & A.Tsatsulnikov. IWN 2014: International Workshop on Nitride Semiconductors 2014. 24 - 29 August 2014. Wroclaw, Poland.
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Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength.M.Auf der Maur, D.Barettin, A.Pecchia, F.Sacconix & A.Di Carlo. NUSOD, 2014. 14th International Conference on Numerical Simulation of Optoelectronic Devices. 1-4 September 2014 Palma de Mallorca, Spain.
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Improved efficiency of InGaN Based blue and green light emitting diodes using corrugated interface substrates.T.Slight, I.Titkov, A.Sakharov, W.Lundin, A.Tsatsulnikov, A.Nikolaev, W.Meredith, E.Rafailov. UK semiconductors 2014 & UK Nitrides Consortium Summer Meeting, 09/07/2014 - 10/07/2014, Sheffield Hallam University, UK.
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Realistic models of quantum-dot heterostructures.M.Auf der Maur, D.Barettin, A.Pecchia, A.Di Carlo. NUSOD, 2014. 14th International Conference on Numerical Simulation of Optoelectronic Devices. 1-4 September 2014 Palma de Mallorca, Spain.
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Structural investigation of the deep-green InGaN LEDs by transmission electron microscopy.M. Korytov, N. Cherkashin, A. Tsatsulnikov, A. Sakharov, A. Nikolaev, W. Lundin and M. Hytch. Photonics West 2015. 13 - 18 February 2016. The Moscone Center, San Francisco, CA, United States.
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Trap-assisted tunneling in InGaN/GaN single-quantum-well LEDs.M. Auf der Maur, A. Di Carlo, B. Galler, I. Pietzonka, M. Strassburg, H. Lugauer. Photonics West 2015. 13 - 18 February 2016. The Moscone Center, San Francisco, CA, United States.
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Losses via Excited States in Green InGaN/GaN Quantum Wells.F. Nippert, A. Nirschl, I. Pietzonka, T. Schulz, M. Albrecht, S. Westerkamp, T. Kure, C. Nenstiel, G. Callsen, M.Strassburg and A. Hoffmann. ISSLED 2014: 10th International Symposium on Semiconductor Light Emitting Devices. 14th to 19th of Dec. 2014. Kaohsiung, Taiwan.
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New trends and challenges in crystal growth in scientific and commercial aspects.M. Leszcyński. 15th International Summer School on Crystal Growth. ISSCG – 15. August 4-10, 2013 Gdańsk, Poland.
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Optimal ways of colour mixing for high-quality white-light LED sources.K.Bulashevich, A.Kulik, & S.Karpov. IWN 2014: International Workshop on Nitride Semiconductors 2014. 24 - 29 August 2014. Wroclaw, Poland.
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Improvement of external quantum efficiency of blue and green InGaN LEDs using corrugated interface substrates.M. Zulonas, T.J. Slight, I.E. Titkov, Sakharov, K. A. Fedorova, W. Lundin, A. Nikolaev, W. Meredith, A. Tsatsulnikov, and E. U. Rafailov. CLEO®/Europe - EQEC 2015: Conference on Lasers and Electro-Optics/Europe and the European Quantum Electronics Conference. Sunday June 21st, 2015 to Thursday June 25th, 2015 in Munich (ICM), Germany.
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High colour rendering dichromatic monolithic light emitting diode with tuneable colour temperature.A. Yadav, I.E. Titkov, A. Sakharov, W. Lundin, A. Nikolaev, G. Sokolovskii, A. Tsatsulnikov and E.U. Rafailov. CLEO®/Europe - EQEC 2015: Conference on Lasers and Electro-Optics/Europe and the European Quantum Electronics Conference. Sunday June 21st, 2015 to Thursday June 25th, 2015 in Munich (ICM), Germany.
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MOVPE growth of InGaN MQWs by modulating the flow of metaloorganic precursors.M. Dmukauskas, A. Kadys, T. Malinauskas, T. Grinys. I. Reklaitis, D. Dobrovolskas, S. Stanionytė, R. Tomašiūnas. EWMOVPE 2015, June 7-10 2015 in Lund, Sweden.
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Realistic model of LED structure with InGaN quantum-dots active region.Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F. Tsatsulnikov, Alexei V. Sakharov, Wsevolod V. Lundin, A. E. Nikolaev, Nikolay Cherkashin, Martin J. Hytch. IEEE NANO: 2015 15th International Conference on Nanotechnology. 27 - 30 July 2015. Rome, Italy.
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Realistic model of an InGaN quantum-dots active region in a LED structure.Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F. Tsatsulnikov, Alexei V. Sakharov, Wsevolod V. Lundin, A. E. Nikolaev, Nikolay Cherkashin, Martin J. Hytch, Sergey Yu. Karpov, and Aldo di Carlo. 23rd International Symposium Nanostructures: Physics and Technology. 22-26 June 2015. St. Petersburg, Russia.
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Blue and green LED structures investigated by photoluminscence.Ignas Reklaitis, Rolandas Kudzma, Roland Tomasiunas, Ines Pietzonka, Ilya Titkov and Edik Rafailov. ICNS-11: 11th International Conference on Nitride Semiconductors. August 30th - September 4th 2015. Beijing, China.
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Growth of InGaN QWs by MOVPE using pulsed precursor flow.M. Dmukauskas, A. Kadys, T. Malinauskas, T. Grinys. I. Reklaitis, D. Dobrovolskas, S. Stanionytė, I. Pietzonka, and R. Tomašiūnas. ICNS-11: 11th International Conference on Nitride Semiconductors. August 30th - September 4th 2015. Beijing, China.
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Stress relaxation (0001) InGaN/GaN Hetrostructures via V-Shape Dislocation formation.M. E. Rudinsky, A. V. Lobanova, N. Cherkashin, A. F. Tsatsulnikov, V. V. Lundin, S. Yu. Karpov, and E. V. Yakovlev. ICNS-11: 11th International Conference on Nitride Semiconductors. August 30th - September 4th 2015. Beijing, China.
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Investigations of effect of the active region design on emission spectra and efficiency of the Heterostructures for monolith multi-color LEDs.A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, A.E. Nikolaev, M.A. Sinitsyn, N.A. Cherkashin, S.Y. Karpov. International Semiconductor Science and Technology Conference 2015. May 11-13, 2015. Kuşadası, Turkey.
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Blue and green LED structures investigated in frequency domain using violet LD as an excitation source.Ignas Reklaitis, Rolandas Kudzma, Roland Tomasiunas, Ines Pietzonka, Ilya Titkov and Edik Rafailov. 41st Lithuanian National Conference on Physics. June 17, 2015 - June 19, 2015. Vilnius, Lithuania.
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Growth of blue and green InGaN MQWs by MOVPE using pulsed metalorganic flow.M. Dmukauskas, A. Kadys, T. Malinauskas, T. Grinys. I. Reklaitis, D. Dobrovolskas, S. Stanionytė, I. Pietzonka, and R. Tomašiūnas. 41st Lithuanian National Conference on Physics. June 17, 2015 - June 19, 2015. Vilnius, Lithuania.
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Transient simulation of InGaN growth.Jan Bassen, Harald Laux, Hans-Jürgen Lugauer, Ines Pietzonka, Maxim Korytov, Nikolay Cherkashin, and Alexander Segal, Eugene Yakovlev. EWMOVPE 2015, June 7-10 2015 in Lund, Sweden.
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Requirements for White LEDs for future Solid State Lighting applications.Ines Pietzonka. EWMOVPE 2015, June 7-10 2015 in Lund, Sweden.
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Application of high-resolution dark-field electron holography for a study of composition distribution in blue and green (In,Ga)N LEDs.M. Korytov, N. Cherkashin, M. Hytch, A. Tsatsulnikov, A. Sakharov, A. Nikolaev, W. Lundin, P. de Mierry, L. Kappei, J. Zuniga-Perez, M. Auf der Maur, and A. Di Carlo. 1st presentation: 6th International Symposium on Growth of III-Nitrides. November 8-13, 2015. Act City Hamamatsu, Hamamatsu, Japan. 2nd presentation: Photonics West 2016. 13 - 18 February 2016. San Francisco, CA , United States.
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Internal quantum efficiency of InGaN quantum well LEDs determined by differential carrier lifetime measurements.Felix Nippert, Ines Pietzonka, Bastian Galler, Alexander Wilm, Sergey Karpov, Thomas Kure, Christian Nenstiel, Gordon Callsen, Martin Straßburg, Axel Hoffmann. 6th International Symposium on Growth of III-Nitrides. November 8-13, 2015. Act City Hamamatsu, Hamamatsu, Japan.
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Photoluminescence frequency domain technique – a tool to investigate InGaN LED structures in a wide range of excitation and time.I.Reklaitis, R.Kudzma, R.Tomasiunas, I.Pietzonka, M.Strassburg. 6th International Symposium on Growth of III-Nitrides. November 8-13, 2015. Act City Hamamatsu, Hamamatsu, Japan.
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InAlGaP red emitting LEDs under extremely high pulsed pumping.Ilya E. Titkov, Grigorii S. Sokolovskii, Sergey Yu. Karpov, Vladislav V. Dudelev, Ksenia K. Soboleva, Amit Yadav, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, and Edik U. Rafailov. SPIE Photonics West 2016. 13 - 18 February 2016. The Moscone Center. San Francisco, CA , United States.
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ᴦ-to-X Bandgap Cross-Over in (In,Ga,Al)P Epilayers Grown on (100) and High-Index GaAs Substrates.S. Schlichting, C. Nenstiel, F. Nippert, N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, A. Hoffmann. SPIE Photonics West 2016. 13 - 18 February 2016. The Moscone Center. San Francisco, CA , United States.
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Internal losses and droop in InGaN/GaN Single Quantum-Well LEDs. Mike Leszczynski. Invited Talk - Laser Optics St. Petersburg.
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Correlation between p-GaN growth environment with electrical and oprtical properties of blue LEDs. M. Zulonas, I.E. Titkov, A. Yadav, V.L. Zerova, K.A. Fedorova, A.F. Tsatsulnikov, W.V. Lundin, A.V.Sakharov, E.U. Rafailov. SPIE Photonics West 2016. 13 - 18 February 2016. The Moscone Center. San Francisco, CA , United States.
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AlGaInP red-emitting light emitting diode under extremely high pulsed pumping. Amit Yadav, Ilya E. Titkov, Grigorii S. Sokolovskii, Sergey Y. Karpov, Vladislav V. Dudelev, Ksenya K. Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, Edik U. Rafailov. SPIE Photonics West 2016. 13 - 18 February 2016. The Moscone Center. San Francisco, CA , United States.
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Application of high-resolution dark-field electron holography for a study of composition distribution in blue and green (In,Ga)N LEDs. M. Korytov, N. Cherkashin, M. Hytch, A. Tsatsulnikov, A. Sakharov, A. Nikolaev, W. Lundin, P. de Mierry, L. Kappei, J. Zuniga-Perez, M. Auf der Maur, and A. Di Carlo. SPIE Photonics West 2016. 13 - 18 February 2016. The Moscone Center. San Francisco, CA , United States.
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MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs.Nikolay Cherkashin, M.J. Hÿtch, M. Korytov , D. Barettin, A. V. Sakharov, A. E. Nikolaev, A. F. Tsatsulnikov. Energy Material Nanotechnology (Croatia Meeting 2016). Dubrovnik, Croatia
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Effect of growth pressure on InGaN quantum well optical and structural properties. A. V. Sakharov, A. F. Tsatsulnikov, W. V. Lundin, A. E. Nikolaev, E. E. Zavarin, S. O.
Usov, M. J. Hÿtch, and N. Cherkashin. Nanostructures: Physics and Technology. St. Petersburg, Russia
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Investigations of effect of the active region design on emission spectra and efficiency of Heterostructure for monolith multi-color LEDs. A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, A.E. Nikolaev, M.A. Sinitsyn, N.A. Cherkashin, S.Y. Karpov. International Semiconductor Science and Technology Conference 2015. Kuşadası, Turkey.
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Stress relaxation (0001) InGaN/GaN Hetrostructures via V-Shape Dislocation formation. M. E. Rudinsky, A. V. Lobanova, N. Cherkashin, A. F. Tsatsulnikov, V. V. Lundin,
S. Yu. Karpov, and E. V. Yakovlev. 11th International Conference on Nitride Semiconductors (ICNS-11). Bejing, China.
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Light-emitting diodes for solid-state lighting: Searching room for improvements. Sergey Yu. Karpov. SPIE Photonics West 2016. 13 - 18 February 2016. The Moscone Center. San Francisco, CA , United States.
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Conference Posters

15th European Workshop on Metalorganic Vapour Phase Epitaxy. June 2nd - 5th, 2013 in Aachen, Germany.
Peculiarities of X-Ray Diffraction Examination of III-N EPI Wafers TOPGAN
Fast MOVPE of III-nitride Materials at Super-atmospheric Pressure in Horizontal Flow Reactor IOFFE
Growth of different spatial profile InGaN MQW structures by MOCVD VUFC
On the Microscopic Origin of Red-shifted Emission of Bulk InGaN Layers OSRAM
Influence of sapphire substrate backside coating on InGaN/GaN growth IOFFE

17th International Conference on Metalorganic Vapor Phase Epitaxy. 13th – 18th July 2014. Lausanne, Switzerland.
Effect of Hydrogen During Growth of the Quantum Barriers on the Properties of Violet, Blue and Green Quantum Wells
Epitaxy of Green Light Emitting Diode and Laser Diode Structure
X-ray Examination of Laterally Patterned III-N Layers
M. Leszcyński

Workshops

1st NEWLED Workshop on Numerical Simulations of LEDs

On the 8th and 9th April, the first NEWLED workshop has been held in Rome, at University of Tor Vergata.The two day workshop has been focusing on numerical simulation
of optical and electronic properties of LEDs and of metal-organic vapour phase epitaxy (MOVPE) growth reactors.The first one and a have days of the workshop have been devoted
to different aspects of LED and process simulation in form of lectures of 90 minutes, introducing the basic concepts and relevant models, and addressing especially
the PhD students and early stage researchers.These lectures have been given by different experts inside the NEWLED consortium.The following topics have been covered: Introduction on device modeling; Nitride LED simulation; Excitonic properties and optical experiments; Electromagnetic simulations; Process simulation; Atomistic models. On the last have day four external experts have presented the state of the art in several related fields: Advanced modeling of electro-optical coupling effects in nano LEDs (Prof. BerndWitzigmann, Uni Kassel); Non-equilibrium Green’s functions for optoelectronic devices (Dr. Urs Aeberhard, FZ Jülich); big- DFT: massively parallel DFT for for materials simulation (Dr. Luigi Genovese, CEA); Advanced characterization techniques (Prof.Andreas Rosenauer, Uni Bremen).These advanced talks have been addressing also the experienced researchers.

The workshop has been attended by a total of 36 participants, including 2 external PhD students and the external experts, following with great interest the series of exciting
presentations.The next workshop, to be focused on growth techniques, will be held in the course of 2015.

2nd NEWLED Workshop on Growth of III-Nitride LEDs

The second training workshop of NEWLED was held on 19-20 October 2015 at University of Rome “Tor Vergata”. This workshop was focused on different aspects and techniques regarding growth of III-nitride LEDs. Seven technical lectures on techniques used in NEWLED and two on related topics have been given.W. Lundin (Ioffe Physico- Technical Institute) has presented a thorough overview on III-nitride Metal-Organic Vapour Phase Epitaxy (MOVPE), covering in particular specific aspects difficult to find in literature,
and giving also an outlook on the future of MOVPE equipment and research and the necessity of access to small state-of-the-art reactors. M. Leszczynski (TopGaN) has
provided insight into the current status of high-pressure MOVPE growth, pointing out the complicated inter-dependence of different growth parameters, current difficulties of the
technology and specific potential advantages of high-pressure growth like more homogeneous InGaN alloy and better surface morphology. S. Karpov (STR Soft Impact) introduced
theoretical models to accurately describe strain effects and surface segregation in growth of III-V heterostructures, while M. Korytov (CEMES-CNRS) illustrated the basic
working principle and the state-of-the-art of High Resolution Transmission Electron Microscopy (HRTEM) and its use for structural characterization and extraction of spatial
alloy composition profiles. J. Bassen (OSRAM Opto Semiconductors) has presented the principles and history of Atomic Layer Deposition (ALD) and the results of the experiments on ALD growth of InGaN quantum well structures performed at OSRAM. P. de Mierry (CNRS CHREA) has given an overview on growth of semi- and non-polar nitride eterostructures,
illustrating among other the different behaviorof dislocations in these structures Figure 1:Group foto after the second workshop day. and an up-to-datecomparison of optical performance compared to standard polar devices.V. Jmerik (Ioffe Physico-Technical Institute) has provided detailed insight into the related field of deep-UV structures grown by Molecular Beam Epitaxy (MBE), giving also an outlook on future importance of such devices. Finally, H. Lugauer (OSRAM Opto Semiconductors) presented the state-of-theart
of core-shell nanrod based white LEDs, illustrating their advantages, remaining technological issues and future prospectives. The workshop has been followed by 25 attendees, including 7 PhD students.The picture shows part of the attendees in front of the workshop location.The 4 PhD students from NEWLED presented their own activity in a special session. Both lectures and student presentations were followed by lively discussions. In particular, the potentialities and problems of the growth approaches with still strong experimental character like high-pressure and ALD have been discussed in view of their potential to grow high quality LED structures.

General Information

Press release

Project video